An integrated single photon detector array using porous anodic alumina

This paper outlines a single photon sensitive detector array. The detector structure is made via CMOS compatible wafer-scale post-processing. The total system comprises a CMOS imaging chip with charge sensitive pixels, an electron multiplier and a photo-cathode. The electron multiplication is achieved by operating a thick layer of integrated porous anodic alumina as an MCP. Material and geometry considerations are given as well as some first experimental results on the required processing steps and on an intermediate experiment with discrete samples of porous anodic alumina.